1 Megabit (128K x 8, Chip Erase) FLASH MEMORY

FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION ­ Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS EXTENDED TEMPERATURE RANGES

PDIP32 (P)

PLCC32 (K)

TSO P32 (N) 8 x 20 mm

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level an d programmed byte-by-byte. It is organised as 128K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in t he equipment. The access time of 100ns makes the device suitable for use in high speed microprocessor systems.